Transistor de efeito de campo
(31)
o transistor do canal de 60V TO-263 N, TO-220 avançou o transistor de efeito de campo do poder
Preço: Negotiated
MOQ: Negotiable
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:mosfet power transistor, high power transistor
60V TO-263 n channel transistor TO-220 advanced power field effect transistor Mosfet n channel features: FET Type:N-Channel Enhancement mode Very low on-resistance Flexible and very practical High switching capability 100% Avalanche Tested before sending to customers Pb-free lead plating; RoHS compl... Veja mais
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
Aprovação horizontal do transistor de poder superior SOT323 da saída do Mosfet de P 3D 3H 3M RoHS
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:mosfet power transistor, high power transistor
p mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor TYPE NUMBERMARKING CODE: BC856W: 3D* BC856AW: 3A* BC856BW: 3B* BC857W: 3H* BC857AW: 3E* BC857BW: 3F* BC857CW: 3G* BC858W: 3M* Field effect transistor features: Low current(max.100mA) Low voltage(max.65V) base-emitter volta... Veja mais
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
1MHz SOP8 LM358 LM358DR SMD durante todo o amplificador do furo
Preço: Negotiated
MOQ: 3000pcs
Prazo de entrega: 10-15 days
Marca: CANYI
Realçar:LM358DR SMD Throught Hole Amplifier, SOP8 SMD Throught Hole Amplifier, 1MHz Power Field Effect Transistor
LM358DR SMD Amplifier dual operational amplifiers SOP8 LM358 LM358DR SMD Amplifier dual operational amplifiers SOP8 LM358 Features Available in 8-Bump micro SMD chip sized package,(See AN-1112) Internally frequency compensated for unity gain Large dc voltage gain: 100 dB Wide bandwidth (unity gain):... Veja mais
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
Transistor de poder MPS2222A do Mosfet de TO-92 600mA 625mW NPN MPS2222 2222A
Preço: Negotiated
MOQ: 3000pcs
Prazo de entrega: 10-15 days
Marca: CANYI
Realçar:625mW NPN Mosfet Power Transistor, 600mA NPN Mosfet Power Transistor, MPS2222A Transistor
MPS2222A MPS2222 2222A TO-92 NPN mosfet power transistor Choose Canyi to get more benefit: Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi Competitive price and save your time Over 10 years work experience technical service team Mix order accepted and free sample Our fast delivery t... Veja mais
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Reguladores de tensão positivos de L7805CV TO-220 L7805 7805 1.5A 5V
Preço: Negotiated
MOQ: Negotiable
Prazo de entrega: 10-15 days
Marca: CANYI
Realçar:L7805CV Positive Voltage Regulators, 1.5A 5V Positive Voltage Regulators, TO-220 Through Hole Voltage Regulator
L7805CV voltage regulator TO-220 L7805 7805 5V POSITIVE VOLTAGE REGULATORS Features Output current to 1.5 A Output voltage of 5V Thermal overload protection Short circuit protection Output transition SOA protection Description The L7805CV of three-terminal positive regulators is available in TO-220 ... Veja mais
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Regulador de tensão positivo 12V de L7812CV L7812 KA7812 MC7812 1A/1.5A
Preço: Negotiated
MOQ: Negotiable
Prazo de entrega: 10-15 days
Marca: CANYI
Realçar:MC7812 Positive Voltage Regulator, KA7812 Positive Voltage Regulator, L7812CV Through Hole Voltage Regulator
L7812CV L7812 KA7812 MC7812 Voltage Regulator 12V 1A/1.5A TO-220 Feature summary Output current to 1.5A Output voltages of 5; 5.2; 6; 8; 8.5; 9; 10; 12; 15; 18; 24V Thermal overload protection Short circuit protection Output transition SOA protection Description The L7800 series of three-terminal po... Veja mais
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Conversores da C.C. da C.A. de VIPER22A VIPER22 AP8022 DIP-8 60KHZ
Preço: Negotiated
MOQ: Negotiable
Prazo de entrega: 10-15 days
Marca: CANYI
Realçar:60KHZ AC DC Converters, VIPER22A AC DC Converters, VIPER22 Through Hole Transistor
VIPER22A VIPER22 AP8022 DIP-8 In Stock FEATURE Fixed 60KHZ switching frequency 9V to 38V wide range VDD voltage current mode control auxilary undervoltage lockout with hysteresis high voltage start up current source overtemperature, overcurrent and overvoltage protection with aytorestart. DESCRIPTIO... Veja mais
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
Pacote do MOSFET NCE30H10K TO-252 do poder do modo do realce do canal das DNO N
Preço: usd 0.2/pcs
MOQ: 2500PCS
Prazo de entrega: 3-5 days
Marca: NCE
Realçar:NCE N Channel MOSFET, NCE30H10K Surface Mount MOSFET, TO-252 Surface Mount MOSFET
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor N channel transistor featuresVDS =30V,ID =100ARDS(ON) Veja mais
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
Mosfet ITO220 do transistor 3N80 do canal do transistor de efeito de campo 800V/N
Preço: Negotiated
MOQ: Negotiable
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:mosfet power transistor, high power transistor
800V n channel transistor 3N80 mosfet ITO220 field effect transistor 20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET High power transistor features: Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching capability Avala... Veja mais
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
Transistor de efeito de campo da elevada precisão 3N80 3A 800V/Mosfet N do poder - canalize TO-220
Preço: Negotiated
MOQ: Negotiable
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:high power transistor, p channel transistor
High precision 3N80 3A 800V Field Effect Transistor/ Power Mosfet N-Channel TO-220 20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET High power transistor features: Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching ca... Veja mais
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
MOSFET do poder do modo do realce do Triode do canal do transistor de efeito de campo MX2301 P
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 1 - 2 Weeks
Marca: DEC
Realçar:mosfet power transistor, high power transistor
Electronic Components A1SHB Transistor 2301 -20V -2.8A SOT-23 P-Channel Product Description The MX2301A uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ... Veja mais
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
Montagem da superfície do tubo do MOS do transistor de efeito de campo MX3401 dos componentes eletrônicos -30V VDS
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 1 - 2 Weeks
Marca: DEC
Realçar:high power transistor, p channel transistor
electronic components MX3401 transistor -30V -4.2A SOT-23-3L P-channel Description The MX3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Shenzh... Veja mais
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
N duplo - projeto high-density da pilha do transistor de efeito de campo MXN3312 do canal para o interruptor do poder
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 1 - 2 Weeks
Marca: DEC
Realçar:mosfet power transistor, p channel transistor
MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet Product Description The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. High density cell design fo ultra low Rdson F... Veja mais
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
Transistor de poder superior de superfície P da montagem MX3407 - tipo de canal RoHS habilitado
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 1 - 2 Weeks
Marca: DEC
Realçar:mosfet power transistor, high power transistor
Electronic Components MX3407 Field Effect Transistor P Channel In Stock Product Description High power and current handing capability Lead free product is acquired Surface mount package Our Advantage: 1. Electronic component specialist and professional. 2. Strong R & D team, experienced research... Veja mais
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
Pacote do original do MOSFET 2A 600V TO-220F do transistor do canal de FQPF2N60C FQPF2N60 2N60 N
Preço: US$ 0.1-0.19 per unit (Pieces)
MOQ: 1000PCS
Prazo de entrega: 3-5 days
Marca: Canyi
Realçar:mosfet power transistor, high power transistor
FQPF2N60C FQPF2N60 2N60 MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package Features:1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 VLow gate charge ( typical 9.0 nC)Low Crss ( typical 5.0 pF)Fast switching100% avalanche testedImproved dv/dt capabilitGeneral Descriptio... Veja mais
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
Modo do realce do canal do transistor de poder superior 2.5A do MOS dos FETs SOT-23 dos MOSFETs SI2301 20V A1SHB P
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:mosfet power transistor, high power transistor
SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features:Advanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMaximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)ParameterSymbolLimitUnitDr... Veja mais
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
Transistor do canal do MOSFET A09T n do transistor de poder NPN do mosfet de AO3400 SOT-23
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:mosfet power transistor, high power transistor
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V Current - Continuous Drain (Id) 25°C5.8A (Ta) Driv... Veja mais
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
N canaliza os transistor de efeito de campo 10N60 do Mosfet 600V para fontes de alimentação comutadas do modo
Preço: US$ 0.1-0.19 per unit (Pieces)
MOQ: 1000PCS
Prazo de entrega: 3-5 days
Marca: Canyi
Realçar:mosfet power transistor, high power transistor
10N60 600V n channel mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche te... Veja mais
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
Componente eletrônico AP70N03NF do Mosfet SMD do transistor do canal do circuito integrado N
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:mosfet power transistor, high power transistor
AP70N03NF.pdfAP70N03NF Transistor MOSFET SMD N-Channel Electronic Component for Integrated Circuit Description The AP70N03NF uses advanced trench technology to provide excellent RDS(ON), low gate 6][charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery ... Veja mais
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
Canal do MOSFET SMD N do transistor de efeito de campo do poder de AP85N03NF com interruptor da carga
Preço: Negotiated
MOQ: 1000PCS
Prazo de entrega: 3-5 days
Marca: CANYI
Realçar:mosfet power transistor, high power transistor
AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch Description The AP85N03NF uses advanced trench technology to provide excellent R DS(ON) low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other S... Veja mais
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