Sistema de recozimento RTP-SA-8 de processamento térmico rápido de produção
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3 month
Marca: Ganova
Realçar:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Veja mais
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sistema de recozimento térmico rápido de 150mm com três gás do processo dos grupos
Preço: Negotiable
MOQ: 1
Prazo de entrega: 8-10week days
Marca: GaNova
Realçar:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Veja mais
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O Fe lubrificou GaN Substrates Resistivity > 10 o ⁶ Ω·Dispositivos RF do Cm
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Veja mais
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625um a 675um 4 safira lisa azul do diodo emissor de luz GaN Epitaxial Wafer On Sapphire SSP da polegada
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Veja mais
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C-plano Sapphire Substrate Wafer de JDCD08-001-006 6inch
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Veja mais
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GaN 2 polegadas Nitreto de gálio Substrato de cristal único
Preço: Negotiable
MOQ: 1
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Veja mais
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Single Crystal Gan Epi Wafer Substrato de Nitreto de Gállio 4 polegadas
Preço: Negotiable
MOQ: 1
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Veja mais
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Nitreto de gálio de substrato GaN independente dopado de 4 polegadas
Preço: Negotiable
MOQ: 1
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Veja mais
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Dispositivo de potência de 2 polegadas Transistor de alta mobilidade eletrônica Wafer epitaxial
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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625um a 675um 4 polegadas LED azul nitruro de gálio GaN Wafer epitaxial em safira SSP safira plana
Preço: Negotiable
MOQ: 5
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Veja mais
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ALN 10*10mm2 AlN Cristal único 400±50μM Grau S/P/R
Preço: Negotiable
MOQ: 1
Prazo de entrega: Negotiable
Marca: GaNova
Realçar:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Veja mais
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2 polegadas de GaN em silicone HEMT Epi wafer para dispositivo de energia
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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Wafer epitaxial de 2 ′′ 6 polegadas tipo N GaN em safira para dispositivo PIN a laser LED
Preço: Negotiable
MOQ: 5
Prazo de entrega: 3-4 weeks
Realçar:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Veja mais
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Wafer de cristal único de 1 polegada AlN 400±50μM Grau S/P/R
Preço: Negotiable
Prazo de entrega: Negotiable
Marca: GaNova
Realçar:1 Inch aln wafer, aln wafer 1 Inch, aluminum nitride wafer aln
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Veja mais
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Wafer epitaxial de GaN essencial para a produção de chips de alta tensão e alta frequência
Preço: Negotiable
MOQ: 5
Prazo de entrega: 3-4 weeks
Marca: Ganova
Realçar:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Veja mais
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Barreira de AlGaN 4 polegadas GaN em silicone HEMT Epi wafer nitruro de gálio GaN-on-Si
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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6 polegadas GaN em silício HEMT Epi Wafer Power Device Nitreto de gálio GaN em Si
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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GaN laser violeta no silício 2 polegadas GaN no silício HEMT Epi wafer UV LD Epi wafer
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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2 polegadas de GaN no silício azul LD Epi Wafer GaN laser azul no silício
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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Blue LED GaN em Wafer de Silício Blue Laser GaN Wafer Epitaxial
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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