Bolacha sic Epitaxial
(42)Dispositivo de potência de 2 polegadas Transistor de alta mobilidade eletrônica Wafer epitaxial
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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2 polegadas de GaN em silicone HEMT Epi wafer para dispositivo de energia
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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Barreira de AlGaN 4 polegadas GaN em silicone HEMT Epi wafer nitruro de gálio GaN-on-Si
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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6 polegadas GaN em silício HEMT Epi Wafer Power Device Nitreto de gálio GaN em Si
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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GaN laser violeta no silício 2 polegadas GaN no silício HEMT Epi wafer UV LD Epi wafer
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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2 polegadas de GaN no silício azul LD Epi Wafer GaN laser azul no silício
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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Blue LED GaN em Wafer de Silício Blue Laser GaN Wafer Epitaxial
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Veja mais
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2 polegadas de GaN em silicone verde LED Epi wafer Nitreto de gálio em silício
Preço: Negotiable
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Veja mais
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4 polegadas GaN em silicone verde LED Epi wafer Wafer SiC epitaxial
Preço: 1000
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Veja mais
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4 polegadas GaN em silicone verde LED Epi wafer Wafer SiC epitaxial
Preço: 1000
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Veja mais
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4 polegadas de UGaN em nitruro de gálio de silício não dopado em Wafer Epitaxial de silício
Preço: 1000
MOQ: 5
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... Veja mais
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bolacha sic Epitaxial de 150.0mm +0mm/-0.2mm nenhum plano secundário 3mm
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Veja mais
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47,5 milímetros de ± bolacha sic Epitaxial 150,0 milímetro +0mm/-0.2mm to<11-20>±1° paralelo de 1,5 milímetros
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Veja mais
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4H bolacha sic Epitaxial ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 milímetro +0mm/-0.2mm
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... Veja mais
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4H bolacha sic Epitaxial 0.015Ω•cm-0.025Ω•² 150,0 milímetro +0mm/-0.2mm do Cm ≤4000/cm
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... Veja mais
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Substrato de SiC nível P de 2 polegadas para dispositivos de energia e dispositivos de microondas
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... Veja mais
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Substrato SiC de 2 polegadas 350μm para eletrônica de potência exigente
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... Veja mais
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0.015Ω•cm-0.025Ω•da C-cara sic Epitaxial da bolacha do cm CMP polonês ótico da Si-cara
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:SiC Epitaxial Wafer C-Face, Optical Polish sic wafer, Si-Face CMP Sic Epitaxial Wafer
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. T... Veja mais
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Substrato de carboneto de silício de 260 μm nível P para dispositivos de energia e dispositivos de micro-ondas
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:260um silicon carbide substrate, Power Devices Epitaxial Wafer, silicon carbide substrate P Level
4H-N/SI260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC subs... Veja mais
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Politipo Nenhum Permitido SiC Epitaxial Wafer P-MOS P-SBD D Grau
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:SiC Epitaxial Wafer P-MOS, D Grade silicon epi wafer, SiC Epitaxial Wafer P-SBD
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to... Veja mais
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