GaN Epitaxial Wafer
(69)
O Fe lubrificou GaN Substrates Resistivity > 10 o ⁶ Ω·Dispositivos RF do Cm
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Veja mais
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625um a 675um 4 safira lisa azul do diodo emissor de luz GaN Epitaxial Wafer On Sapphire SSP da polegada
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Veja mais
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GaN 2 polegadas Nitreto de gálio Substrato de cristal único
Preço: Negotiable
MOQ: 1
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Veja mais
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Single Crystal Gan Epi Wafer Substrato de Nitreto de Gállio 4 polegadas
Preço: Negotiable
MOQ: 1
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Veja mais
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Nitreto de gálio de substrato GaN independente dopado de 4 polegadas
Preço: Negotiable
MOQ: 1
Prazo de entrega: Negotiable
Marca: Ganova
Realçar:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Veja mais
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625um a 675um 4 polegadas LED azul nitruro de gálio GaN Wafer epitaxial em safira SSP safira plana
Preço: Negotiable
MOQ: 5
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Veja mais
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Wafer epitaxial de 2 ′′ 6 polegadas tipo N GaN em safira para dispositivo PIN a laser LED
Preço: Negotiable
MOQ: 5
Prazo de entrega: 3-4 weeks
Realçar:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Veja mais
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Wafer epitaxial de GaN essencial para a produção de chips de alta tensão e alta frequência
Preço: Negotiable
MOQ: 5
Prazo de entrega: 3-4 weeks
Marca: Ganova
Realçar:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Veja mais
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5 X 10 mm2 Face M GaN Epitaxial Wafer Espessura 325um 375um
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Veja mais
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GaN dopado com UID tipo N de 4 polegadas em wafer de safira SSP Resistividade＞0,5 Ω cm LED, laser, PIN Wafer epitaxial
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Veja mais
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LED azul de 4 polegadas GaN Epitaxial Wafer C Plane Flat Sapphire
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Veja mais
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375 um GaN Epitaxial Wafer Livre U-GaN SI-GaN Substratos
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Veja mais
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12.5mm 2inch N autônomo GaN Epi Wafer Si Doped
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... Veja mais
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Polegada GaN Epi Wafer Dimensions da espessura 370um 430um 2 50mm
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... Veja mais
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5x10mm2 GaN Epitaxial Wafer Un Dopado Tipo SI
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... Veja mais
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Wafer de semicondutor de nitreto de gálio monocristal TTV 10um
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... Veja mais
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Plano da bolacha de semicondutor 325um do nitreto do gálio 375um C
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... Veja mais
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5x10mm2 Sp Face Gan Epitaxial Wafer Un Dopado Si Tipo Gan Substrato Monocristal
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... Veja mais
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O Un lubrificou o tipo GaN Single Crystal Substrate 5x10mm2 M Face de N
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
Realçar:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... Veja mais
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Preço: Negotiable
MOQ: Negotiable
Prazo de entrega: 3-4 week days
Marca: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... Veja mais
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